Field-free magnetization switching

Author: evhi

August undefined, 2024

WebSpin-orbit torques arising from the spin-orbit coupling of non-magnetic heavy metals allow electrical switching of perpendicular magnetization. WebHere, we fabricate the epitaxial L11-CoPt/D019-Mn3Ga bilayers on MgO (111) substrates and characterize their magnetic and electrical transport properties. In the L11-CoPt/D019 …

Field-Free Switching of a Spin-Orbit-Torque Device Through …

WebJul 21, 2024 · The large interfacial SOT efficiency and deterministic field-free magnetization switching in the trilayers structure may accelerate the application of ferrimagnet in SOT memory devices. This work was supported by the National Natural Science Foundation of China (Nos. 11674142, 51771099, and 11774139) and by the … childcare kitchen hand

Thickness Dependence of Interface‐Generated Spin Currents in ...

WebJan 23, 2024 · Zero-field SAW-driven magnetization switching following a 250-ns-long 987-MHz rf pulse applied to the right (a) or left (b),(c) transducer (images 306 × 410 μ m 2). When observing far from the excitation, the acoustic and magneto-acoustic losses need to be compensated to obtain a similar switching efficiency; hence the larger power (+35 … WebMar 7, 2024 · In this paper, we report that field-free SOT switching in a L10-FePt single layer with a large switching ratio of 26% is obtained by using a MgO 100 ⋀8°/ 100 miscut substrate. It is found that field-free switching depends on the direction of the imposed pulse current. Only when the electric current is along the y (010)-direction… WebOct 1, 2024 · The electrical switching of magnetization through spin–orbit torque (SOT)¹ holds promise for application in information technologies, such as low-power, non-volatile magnetic memory. Materials... childcare kitchener

Sensors Free Full-Text Magnetism-Based Remote Query …

Field-free spin–orbit torque switching in L10-FePt single layer …

To understand the nature of current-induced magnetization switching in the presence of the in-plane coupling field in our devices, Kerr microscopy is utilized to visualize magnetization reversal process, as shown in Fig. 3, with current pulses of 100 ns in duration. It’s observed that small opposite domains … See more The film stack for field-free magnetization switching is substrate/Co(2)/Ru(0.85)/Co(2)/Ir(1.35)/Co(1.2)/Ta(2), with unit in nanometers. Here, the top thin Co layer is naturally perpendicularly magnetized due to … See more To study the SOT-driven magnetization switching, current pulses are injected along the current channel with each pulse length of 100 μs. The Hall voltage was measured after each write pulse with a read current of 100 … See more To provide further understanding of the experimental observations, the effect of pure spin current in the perpendicular Co layer is modeled by … See more WebMar 16, 2024 · Compared to the conventional spin-orbit torque devices, the observed switching does not need any external magnetic field and requires much lower current … child care kissimmee flWebApr 12, 2024 · Here, we demonstrated that the odd planar Hall voltage (O-PHV) signal exhibits an odd symmetry with the application of an external magnetic field which motivates us to develop a reading mechanism for detecting magnetization switching of in-plane magnetized type-X devices. child care kirkland

"WebJun 12, 2024 · This machine learning model can be used to rapidly and accurately identify the nanomagnet size, interfacial DMI strength, and … " - Field-free magnetization switching

Field-free magnetization switching

Field‐Free Switching of Magnetization by Tilting the …

WebSep 4, 2024 · However, the necessity of an in-plane magnetic field to induce deterministic switching is an obstacle to feasibility in practical applications. Here, it is shown that the … WebMetallic ferrimagnets with rare earth-transition metal alloys can provide novel properties that cannot be obtained using conventional ferromagnets. Recently, the compensation point of ferrimagnets, where the net magnetization or net angular momentum vanishes, has been considered a key aspect for memory device applications. For such applications, the …

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WebApr 30, 2024 · This study reports realizable field-free magnetization switching by SOT via Cr doping to form a single-layer magnetic structure with an in-plane magnetization … WebFeb 11, 2024 · Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular …

WebJun 29, 2024 · Then, the magnetic field is removed, letting magnets realign following the input element. Once the magnetic field is removed, magnets are free to switch one by one, propagating information with a domino-like effect. The clock field can be obtained by means of a current flowing through a wire placed under the magnets’ plane. WebFeb 11, 2024 · Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through interfacing with a dielectric MgO …

WebJul 26, 2024 · On the one hand, various approaches have been explored to realize magnetic field-free SOT switching, [14][15][16][17][18] including the utilization of a wedged structure, 19,20 exchange coupling ... WebEnter the email address you signed up with and we'll email you a reset link.

WebApr 28, 2024 · Figure 2. Field-free switching assisted by DWs. (a),(b) Field-free current-driven switching R H vs I p loop measured in State I (a) and State II (b) with MOKE images taken for the labeled current. (c), (d) Schematic illustrations of the moment configuration of the Co / Ni / Co trilayer in State I (c) and State II (d) at the moments that the DWs tend to …

WebOct 7, 2001 · Two wireless, passive remote query magnetism-based glucose sensors, which operate in combination with a mass and volume changing glucose responsive polymer, are presented. One sensor design is based upon the magnetostatic coupling of magnetically soft thin-film elements; as the polymer volume changes in response to glucose concentration … childcare kitchenWebMay 5, 2024 · The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization … childcare kitchen setsWebJul 22, 2024 · Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field … goth vs romansWebApr 6, 2024 · Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with … goth vs sceneWebApr 10, 2024 · Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque. Chaoliang Zhang, Yutaro Takeuchi, Shunsuke Fukami and Hideo Ohno. goth-waffles tumblrWebMar 25, 2024 · Request PDF Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching Type-x device attracts considerable interest in the field of spintronics due ... child care kitchen suppliesWebSep 4, 2024 · However, the necessity of an in-plane magnetic field to induce deterministic switching is an obstacle to feasibility in practical applications. Here, it is shown that the field-free current-induced magnetization switching in a perpendicular magnetized Pt 1− x Mo x /Co/Ru heterostructure with x = 0, 0.04, 0.07, 0.12, and 0. goth vw show